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SI7913DN-T1-GE3
Deskripsi:
SI7913DN-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay / Siliconix stock available at Rozee
Kategori:
Semikonduktor Diskrit
Spesifikasi
Part Number:
SI7913DN-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa MoneyGram Western Union
More Information:
SI7913DN-T1-GE3 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$1.66
Remark:
Manufacturer: Vishay / Siliconix.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Height:
1.04 mm
Fall Time:
70 ns
Rds On Max:
37 mΩ
Schedule B:
8541290080
Contact Plating:
Tin
Threshold Voltage:
-1 V
Number of Elements:
2
Turn-Off Delay Time:
72 ns
Max Power Dissipation:
1.3 W
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
8 V
Drain to Source Voltage (Vdss):
20 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Arrays
Qty:
2983 In Stock
Applications:
Portable electronics
Hybrid, electric & powertrain systems
Electronic point of sale (EPOS)
Width:
3.05 mm
Length:
3.05 mm
Rise Time:
70 ns
Resistance:
37 MΩ
Number of Pins:
8
Power Dissipation:
1.3 W
Number of Channels:
2
Turn-On Delay Time:
20 ns
Element Configuration:
Dual
Max Operating Temperature:
150 °C
Drain to Source Resistance:
37 mΩ
Continuous Drain Current (ID):
5 A
Drain to Source Breakdown Voltage:
-20 V
Nomor model:
SI7913DN-T1-GE3
Pengantar
SI7913DN-T1-GE3 Overview\\\\nSI7913DN-T1-GE3 is a model belonging to the Transistors - FETs, MOSFETs - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have SI7913DN-T1-GE3 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensive
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