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SIA975DJ-T1-GE3
Deskripsi:
SIA975DJ-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay / Siliconix stock available at Rozee
Kategori:
Semikonduktor Diskrit
Spesifikasi
Part Number:
SIA975DJ-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
SIA975DJ-T1-GE3 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.64
Remark:
Manufacturer: Vishay / Siliconix.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Fall Time:
15 ns
Rds On Max:
41 mΩ
Schedule B:
8541290080
Contact Plating:
Tin
Power Dissipation:
1.9 W
Number of Channels:
2
Turn-On Delay Time:
22 ns
Element Configuration:
Dual
Max Operating Temperature:
150 °C
Drain to Source Resistance:
41 mΩ
Continuous Drain Current (ID):
4.5 A
Drain to Source Breakdown Voltage:
-12 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Arrays
Qty:
5341 In Stock
Applications:
Medical
Grid infrastructure
Wireless infrastructure
Weight:
28.009329 mg
Rise Time:
22 ns
Resistance:
41 mΩ
Number of Pins:
6
Input Capacitance:
1.5 nF
Threshold Voltage:
-400 mV
Number of Elements:
2
Turn-Off Delay Time:
32 ns
Max Power Dissipation:
7.8 W
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
8 V
Drain to Source Voltage (Vdss):
12 V
Nomor model:
SIA975DJ-T1-GE3
Pengantar
SIA975DJ-T1-GE3 Overview\\\\nSIA975DJ-T1-GE3 is a model belonging to the Transistors - FETs, MOSFETs - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have SIA975DJ-T1-GE3 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensive
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