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IRF7343TRPBF
Deskripsi:
IRF7343TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from IR (Infineon Technologies) stock available at Rozee
Kategori:
Semikonduktor Diskrit
Spesifikasi
Part Number:
IRF7343TRPBF
Manufacturer:
IR (Infineon Technologies)
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
IRF7343TRPBF More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$1.00
Remark:
Manufacturer: IR (Infineon Technologies).
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Height:
1.5 mm
Packaging:
Tape & Reel
Resistance:
105 mΩ
Nominal Vgs:
1 V
Current Rating:
4.7 A
Contact Plating:
Tin
Input Capacitance:
740 pF
Threshold Voltage:
1 V
Number of Elements:
2
Max Power Dissipation:
2 W
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
20 V
Max Junction Temperature (Tj):
150 °C
Drain to Source Breakdown Voltage:
55 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Arrays
Qty:
5844 In Stock
Applications:
Enterprise projectors
Gaming
Hybrid, electric & powertrain systems
Width:
4 mm
Length:
5 mm
Rds On Max:
50 mΩ
Schedule B:
8541290080
Case/Package:
SOIC
Number of Pins:
8
Package Quantity:
4000
Power Dissipation:
2 W
Number of Channels:
2
On-State Resistance:
50 mΩ
Max Operating Temperature:
150 °C
Drain to Source Resistance:
65 mΩ
Continuous Drain Current (ID):
4.7 A
Drain to Source Voltage (Vdss):
55 V
Nomor model:
IRF7343TRPBF
Pengantar
IRF7343TRPBF Overview\\\\nIRF7343TRPBF is a model belonging to the Transistors - FETs, MOSFETs - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have IRF7343TRPBF high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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