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SI1912EDH-T1-E3
Deskripsi:
SI1912EDH-T1-E3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay / Siliconix stock available at Rozee
Kategori:
Semikonduktor Diskrit
Spesifikasi
Part Number:
SI1912EDH-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
SI1912EDH-T1-E3 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: Vishay / Siliconix.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Height:
900 µm
Fall Time:
85 ns
Rise Time:
85 ns
Resistance:
280 mΩ
Case/Package:
SOT-363
Power Dissipation:
570 mW
Number of Elements:
2
Turn-Off Delay Time:
350 ns
Max Power Dissipation:
570 mW
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
12 V
Drain to Source Voltage (Vdss):
20 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Arrays
Qty:
905 In Stock
Applications:
Advanced driver assistance systems (ADAS)
Grid infrastructure
Enterprise projectors
Width:
1.25 mm
Length:
2.05 mm
Packaging:
Cut Tape
Rds On Max:
280 mΩ
Nominal Vgs:
450 mV
Number of Pins:
6
Threshold Voltage:
450 mV
Turn-On Delay Time:
45 ns
Element Configuration:
Dual
Max Operating Temperature:
150 °C
Drain to Source Resistance:
280 mΩ
Continuous Drain Current (ID):
1.28 A
Drain to Source Breakdown Voltage:
20 V
Nomor model:
SI1912EDH-T1-E3
Pengantar
SI1912EDH-T1-E3 Overview\\nSI1912EDH-T1-E3 is a model belonging to the Transistors - FETs, MOSFETs - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have SI1912EDH-T1-E3 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively
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